光(guang)伏(fu)發(fa)電是利(li)用半導(dao)體(ti)界面(mian)的光(guang)生伏(fu)特效應而將(jiang)光(guang)能直接轉變(bian)為電能的一種技(ji)術。主要(yao)由太(tai)(tai)陽(yang)(yang)電池板(組(zu)件(jian))、控制器(qi)和(he)逆變(bian)器(qi)三大部分(fen)組(zu)成,主要(yao)部件(jian)由電子元器(qi)件(jian)構(gou)成。太(tai)(tai)陽(yang)(yang)能電池經過(guo)串聯后進行封裝(zhuang)保護可形成大面(mian)積的太(tai)(tai)陽(yang)(yang)電池組(zu)件(jian),再配合上(shang)功率控制器(qi)等(deng)部件(jian)就形成了(le)光(guang)伏(fu)發(fa)電裝(zhuang)置(zhi)。
光(guang)伏(fu)發電(dian)(dian)(dian)(dian)的(de)主要原理(li)是半(ban)導體的(de)光(guang)電(dian)(dian)(dian)(dian)效應。光(guang)子(zi)(zi)照射到金屬(shu)(shu)上時,它的(de)能(neng)(neng)量可以被金屬(shu)(shu)中某(mou)個電(dian)(dian)(dian)(dian)子(zi)(zi)全部(bu)吸收,電(dian)(dian)(dian)(dian)子(zi)(zi)吸收的(de)能(neng)(neng)量足夠大,能(neng)(neng)克服金屬(shu)(shu)內部(bu)引力做功,離開金屬(shu)(shu)表面(mian)逃逸出來,成為光(guang)電(dian)(dian)(dian)(dian)子(zi)(zi)。硅原子(zi)(zi)有4個外(wai)層電(dian)(dian)(dian)(dian)子(zi)(zi),如果在純硅中摻入有5個外(wai)層電(dian)(dian)(dian)(dian)子(zi)(zi)的(de)原子(zi)(zi)如磷(lin)原子(zi)(zi),就(jiu)成為N型(xing)半(ban)導體;若在純硅中摻入有3個外(wai)層電(dian)(dian)(dian)(dian)子(zi)(zi)的(de)原子(zi)(zi)如硼原子(zi)(zi),形(xing)成P型(xing)半(ban)導體。當(dang)P型(xing)和N型(xing)結合在一起時,接觸面(mian)就(jiu)會(hui)形(xing)成電(dian)(dian)(dian)(dian)勢差,成為太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)池。當(dang)太(tai)陽(yang)光(guang)照射到P-N結后(hou),空穴由(you)(you)P極(ji)區往N極(ji)區移動,電(dian)(dian)(dian)(dian)子(zi)(zi)由(you)(you)N極(ji)區向(xiang)P極(ji)區移動,形(xing)成電(dian)(dian)(dian)(dian)流(liu)。
光(guang)電(dian)(dian)效應就是(shi)光(guang)照使不均勻半(ban)導體或半(ban)導體與(yu)金(jin)屬結(jie)合的不同部位(wei)之間(jian)產生電(dian)(dian)位(wei)差的現象。它(ta)首(shou)先是(shi)由(you)光(guang)子(zi)(光(guang)波)轉化為(wei)電(dian)(dian)子(zi)、光(guang)能量轉化為(wei)電(dian)(dian)能量的過程;其次(ci),是(shi)形成電(dian)(dian)壓過程。
多(duo)晶硅(gui)經過鑄錠(ding)、破錠(ding)、切片(pian)等程(cheng)序后(hou),制作成(cheng)(cheng)待加工的(de)硅(gui)片(pian)。在(zai)(zai)硅(gui)片(pian)上摻雜和擴散微量的(de)硼、磷等,就形(xing)成(cheng)(cheng)P-N結。然后(hou)采(cai)用(yong)(yong)絲網(wang)(wang)印刷,將(jiang)精(jing)配好的(de)銀漿印在(zai)(zai)硅(gui)片(pian)上做成(cheng)(cheng)柵線(xian),經過燒結,同時(shi)制成(cheng)(cheng)背電(dian)(dian)(dian)極(ji),并在(zai)(zai)有(you)柵線(xian)的(de)面(mian)涂(tu)一層(ceng)防反(fan)射(she)涂(tu)層(ceng),電(dian)(dian)(dian)池(chi)(chi)片(pian)就至此制成(cheng)(cheng)。電(dian)(dian)(dian)池(chi)(chi)片(pian)排列組(zu)合成(cheng)(cheng)電(dian)(dian)(dian)池(chi)(chi)組(zu)件(jian),就組(zu)成(cheng)(cheng)了大的(de)電(dian)(dian)(dian)路(lu)板(ban)。一般(ban)在(zai)(zai)組(zu)件(jian)四周(zhou)包鋁框(kuang),正面(mian)覆蓋玻璃,反(fan)面(mian)安裝(zhuang)(zhuang)電(dian)(dian)(dian)極(ji)。有(you)了電(dian)(dian)(dian)池(chi)(chi)組(zu)件(jian)和其(qi)他(ta)輔助設備(bei),就可以(yi)組(zu)成(cheng)(cheng)發電(dian)(dian)(dian)系(xi)統(tong)。為了將(jiang)直流電(dian)(dian)(dian)轉化交(jiao)流電(dian)(dian)(dian),需要安裝(zhuang)(zhuang)電(dian)(dian)(dian)流轉換(huan)(huan)器。發電(dian)(dian)(dian)后(hou)可用(yong)(yong)蓄電(dian)(dian)(dian)池(chi)(chi)存儲,也可輸(shu)入公共電(dian)(dian)(dian)網(wang)(wang)。發電(dian)(dian)(dian)系(xi)統(tong)成(cheng)(cheng)本中,電(dian)(dian)(dian)池(chi)(chi)組(zu)件(jian)約占50%,電(dian)(dian)(dian)流轉換(huan)(huan)器、安裝(zhuang)(zhuang)費、其(qi)他(ta)輔助部件(jian)以(yi)及其(qi)他(ta)費用(yong)(yong)占另(ling)外(wai)50%。
無論從世(shi)界還是從中國來(lai)看,常規能(neng)(neng)源都是很有(you)限的(de)(de)(de)(de)(de)。中國的(de)(de)(de)(de)(de)一(yi)次(ci)能(neng)(neng)源儲量遠遠低于世(shi)界的(de)(de)(de)(de)(de)平均水平,大約只有(you)世(shi)界總儲量的(de)(de)(de)(de)(de)10%。太陽能(neng)(neng)是人類取之(zhi)不(bu)盡用(yong)之(zhi)不(bu)竭的(de)(de)(de)(de)(de)可再生(sheng)能(neng)(neng)源,具有(you)充(chong)分的(de)(de)(de)(de)(de)清潔性(xing)(xing)、絕(jue)對的(de)(de)(de)(de)(de)安(an)全性(xing)(xing)、相對的(de)(de)(de)(de)(de)廣(guang)泛性(xing)(xing)、確實的(de)(de)(de)(de)(de)長(chang)壽命和免維護性(xing)(xing)、資源的(de)(de)(de)(de)(de)充(chong)足性(xing)(xing)及潛(qian)在的(de)(de)(de)(de)(de)經(jing)濟性(xing)(xing)等(deng)優點,在能(neng)(neng)源戰略中具有(you)重(zhong)要地位。