一、igbt模塊損壞的原因有哪些

IGBT模塊是能源變換與傳輸的核心器件，在軌道交通、智能電網、航空航天、電動汽車等領域有著廣泛的應用。在使用過程中，IGBT模塊受到(dao)容性或感性負載的(de)(de)沖擊，可能導致(zhi)模塊損(sun)壞，一般igbt模塊損(sun)壞的(de)(de)原因主要有(you)：

1、過電流損壞

（1）鎖定效應

IGBT為復合器(qi)件， 其內有一(yi)個(ge)寄生(sheng)晶(jing)閘(zha)(zha)管(guan)，在(zai)規定(ding)的漏(lou)極(ji)電流范圍內，NPN的正偏壓不足以使NPN晶(jing)體管(guan)導(dao)通，當漏(lou)極(ji)電流大到一(yi)定(ding)程度時， 這個(ge)正偏壓足以使NPN晶(jing)體管(guan)開通，進而使NPN或PNP晶(jing)體管(guan)處于飽(bao)和狀態，于是寄生(sheng)晶(jing)閘(zha)(zha)管(guan)開通，柵(zha)極(ji)失去了控制作(zuo)用，便發生(sheng)了鎖定(ding)效應。IGBT發生(sheng)鎖定(ding)效應后，集電極(ji)電流過大，造成了過高的功耗而導(dao)致器(qi)件損(sun)壞。

（2）長時間過流運行

IGBT模塊長時間過流運(yun)行是指(zhi)(zhi)IGBT的(de)運(yun)行指(zhi)(zhi)標達到(dao)或超出RBSOA（反偏(pian)安(an)全工作區）所限定的(de)電(dian)流安(an)全邊(bian)界（如選型失誤(wu)、安(an)全系數偏(pian)小等），出現(xian)這種情況時，電(dian)路必須能(neng)在電(dian)流到(dao)達RBSOA限定邊(bian)界前立即(ji)關(guan)斷器件，才能(neng)達到(dao)保(bao)護器件的(de)目的(de)。

（3）短路超時（>10us）

短(duan)(duan)路超時(shi)(shi)(shi)是指IGBT所承受(shou)的(de)(de)電流(liu)值(zhi)達(da)到(dao)或超出(chu)SCSOA（短(duan)(duan)路安全工作區）所限(xian)定的(de)(de)最大邊界(jie)，比(bi)如4-5倍(bei)額定電流(liu)時(shi)(shi)(shi)，必須(xu)在(zai)(zai)10us之(zhi)內關(guan)斷IGBT。如果此時(shi)(shi)(shi)IGBT所承受(shou)的(de)(de)最大電壓也超過器件標稱(cheng)值(zhi)，IGBT必須(xu)在(zai)(zai)更(geng)短(duan)(duan)的(de)(de)時(shi)(shi)(shi)間(jian)內被關(guan)斷。

2、過電壓損壞和靜電損壞

IGBT在關斷時，由于(yu)逆變(bian)電(dian)(dian)(dian)(dian)(dian)(dian)路中存在電(dian)(dian)(dian)(dian)(dian)(dian)感(gan)成(cheng)分(fen)，關斷瞬(shun)間產生尖(jian)峰電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)，如(ru)果尖(jian)峰電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)超(chao)過(guo)(guo)(guo)IGBT器件的(de)最高峰值(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)，將(jiang)造成(cheng)IGBT擊穿損(sun)壞(huai)。IGBT過(guo)(guo)(guo) 電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)損(sun)壞(huai)可分(fen)為集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)柵(zha)(zha)(zha)極(ji)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)、柵(zha)(zha)(zha)極(ji)-發(fa)射(she)極(ji)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)、高du/dt過(guo)(guo)(guo)壓(ya)(ya)(ya)(ya)(ya)電(dian)(dian)(dian)(dian)(dian)(dian)等。大多數過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)保護的(de)電(dian)(dian)(dian)(dian)(dian)(dian)路設計都比較(jiao)完善，但(dan)是對于(yu)由高du/dt所(suo)導致的(de)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)故(gu)障，基本(ben)上都是采用無感(gan)電(dian)(dian)(dian)(dian)(dian)(dian)容或者(zhe)RCD結構吸(xi)收電(dian)(dian)(dian)(dian)(dian)(dian)路。由于(yu)吸(xi)收電(dian)(dian)(dian)(dian)(dian)(dian)路設計的(de)吸(xi)收容量(liang)不(bu)夠(gou)而(er)(er)造成(cheng)IGBT損(sun)壞(huai)，對此可采用電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)鉗(qian)位(wei)，往(wang)(wang)往(wang)(wang)在集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)-柵(zha)(zha)(zha)極(ji)兩端并接(jie)齊(qi)納二極(ji)管，采用柵(zha)(zha)(zha)極(ji)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)動(dong)態控制，當(dang)集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)瞬(shun)間超(chao)過(guo)(guo)(guo)齊(qi)納二極(ji)管的(de)鉗(qian)位(wei)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)時，超(chao)出的(de)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)將(jiang)疊加(jia)在柵(zha)(zha)(zha)極(ji)上（米勒效應(ying)起作用），避免了(le)IGBT因受集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)發(fa)射(she)極(ji)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)而(er)(er)損(sun)壞(huai)。

采用柵(zha)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)電(dian)(dian)壓(ya)動態控制(zhi)可(ke)以(yi)解決過(guo)(guo)高的(de)(de)(de)(de)du/dt帶來(lai)的(de)(de)(de)(de)集電(dian)(dian)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)發(fa)(fa)(fa)射極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)瞬間(jian)過(guo)(guo)電(dian)(dian)壓(ya)問(wen)題(ti)，但(dan)是它(ta)的(de)(de)(de)(de)弊端是當IGBT處于(yu)感性負載運行時(shi)(shi)，半橋結(jie)構中(zhong)處于(yu)關斷(duan)的(de)(de)(de)(de)IGBT，由于(yu)其反并聯二(er)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)管(guan)（續(xu)流(liu)二(er)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)管(guan)）的(de)(de)(de)(de)恢復，其集電(dian)(dian)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)發(fa)(fa)(fa)射極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)兩端的(de)(de)(de)(de)電(dian)(dian)壓(ya)急劇上(shang)升，從而承受瞬間(jian)很高的(de)(de)(de)(de)du/dt。多數情況下(xia)，該(gai)(gai)du/dt值(zhi)要比IGBT正常(chang)關斷(duan)時(shi)(shi)的(de)(de)(de)(de)集電(dian)(dian)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)發(fa)(fa)(fa)射極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)電(dian)(dian)壓(ya)上(shang)升率(lv)高，由于(yu)米(mi)勒電(dian)(dian)容（ Cres）的(de)(de)(de)(de)存在，該(gai)(gai)du/dt值(zhi)將 在集電(dian)(dian)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)和(he)柵(zha)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)之(zhi)間(jian)產生一個 瞬間(jian)電(dian)(dian)流(liu)，流(liu)向柵(zha)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)驅動電(dian)(dian)路。該(gai)(gai)電(dian)(dian)流(liu)與柵(zha)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)電(dian)(dian)路的(de)(de)(de)(de)阻抗相(xiang)互作用，直接(jie)導(dao)(dao)致(zhi)柵(zha)極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)-發(fa)(fa)(fa)射極(ji)(ji)(ji)(ji)(ji)(ji)(ji)(ji)電(dian)(dian)壓(ya)UGE值(zhi)的(de)(de)(de)(de)升高，甚至超過(guo)(guo)IGBT的(de)(de)(de)(de)開(kai)通(tong)門限電(dian)(dian)壓(ya)VGEth值(zhi)。出現惡劣的(de)(de)(de)(de)情況就是使IGBT被誤觸發(fa)(fa)(fa)導(dao)(dao)通(tong)，導(dao)(dao)致(zhi)變換(huan)器(qi)的(de)(de)(de)(de)橋臂短路。

3、過熱損壞

過熱損壞一(yi)般指使用中IGBT模(mo)塊的(de)(de)(de)結溫正超過晶(jing)片的(de)(de)(de)最(zui)大溫度限(xian)定，目前應(ying)(ying)用的(de)(de)(de)IGBT器件還是以Tjmax=150℃的(de)(de)(de)NPT技術為主流的(de)(de)(de)，為此在IGBT模(mo)塊應(ying)(ying)用中其結溫應(ying)(ying)限(xian)制(zhi)在該值以下(xia)。

4、G-E間開放狀態下外加主電路電壓

在(zai)(zai)門(men)極一(yi)(yi)發射極問(wen)開(kai) 放(fang)的(de)狀態下外(wai)加主電(dian)(dian)(dian)路(lu)電(dian)(dian)(dian)壓，會(hui)使IGBT自(zi)動導通(tong)(tong)(tong)，通(tong)(tong)(tong)過(guo)過(guo)大的(de)電(dian)(dian)(dian)流，使器(qi)件(jian)(jian)損壞(huai)（這(zhe)種現象是(shi)由(you)于G-E間(jian)(jian)在(zai)(zai)開(kai)放(fang)狀下，外(wai)加主電(dian)(dian)(dian)壓，通(tong)(tong)(tong)過(guo)IGBT的(de)反向(xiang)傳輸(shu)電(dian)(dian)(dian)容(rong)Cres給門(men)極-發射極間(jian)(jian)的(de)電(dian)(dian)(dian)毒充電(dian)(dian)(dian)，使IGBT導通(tong)(tong)(tong)而產生(sheng)的(de)）。在(zai)(zai)IGBT器(qi)件(jian)(jian)試(shi)(shi)驗(yan)時(shi)，通(tong)(tong)(tong)過(guo)旋轉(zhuan)開(kai)關等(deng)(deng)機(ji)(ji)械(xie)開(kai)關進行信號線的(de)切(qie)(qie)換(huan)，由(you)于切(qie)(qie)換(huan)時(shi)G_E間(jian)(jian)瞬間(jian)(jian)變為開(kai)放(fang)狀態，可能(neng)產生(sheng)上述(shu)現象而損壞(huai)IGBT器(qi)件(jian)(jian)。另外(wai)，在(zai)(zai)機(ji)(ji)械(xie)開(kai)關出現振動的(de)情況下，也存在(zai)(zai)同樣的(de)時(shi)間(jian)(jian)段(duan)，可能(neng)損壞(huai)元件(jian)(jian)。為了防止這(zhe)種損壞(huai)，必須(xu)先(xian)將(jiang)主電(dian)(dian)(dian)路(lu)（C-E間(jian)(jian)）的(de)電(dian)(dian)(dian)壓放(fang)電(dian)(dian)(dian)至0V,再進行門(men)極信號的(de)切(qie)(qie)換(huan)。另外(wai)，對由(you)多個IGBT器(qi)件(jian)(jian)（一(yi)(yi)組2個以上）構成的(de)裝置在(zai)(zai)進行試(shi)(shi)驗(yan)等(deng)(deng)特性試(shi)(shi)驗(yan)時(shi)，測試(shi)(shi)IGBT器(qi)件(jian)(jian)以外(wai)的(de)門(men)極一(yi)(yi)發射極間(jian)(jian)必須(xu)予以短路(lu)。

5、機械應力對產品的破壞

IGBT器件的(de)(de)端(duan)子如果(guo)受到強外(wai)力(li)(li)或振(zhen)動(dong)，就會(hui)產生(sheng)應力(li)(li)，有(you)時(shi)會(hui)導(dao)致損(sun)壞IGBT器件內部電(dian)氣配線等(deng)情況。在將IGBT器件實際(ji)安(an)裝(zhuang)到裝(zhuang)置(zhi)上時(shi)，應避(bi)免(mian)發生(sheng)類似(si)的(de)(de)應力(li)(li)。如果(guo)不固定門極驅動(dong)用的(de)(de)印(yin)刷基(ji)(ji)板即安(an)裝(zhuang)時(shi)，裝(zhuang)置(zhi)在搬運時(shi)由于(yu)受到振(zhen)動(dong)等(deng)原因，門極驅動(dong)用的(de)(de)印(yin)刷基(ji)(ji)板也(ye)振(zhen)動(dong)，從而使(shi)IGBT器件的(de)(de)端(duan)子發生(sheng)應力(li)(li)，引起(qi)IGBT器件內部電(dian)氣配線的(de)(de)損(sun)壞等(deng)問題。為(wei)了防止這種不良(liang)情況的(de)(de)發生(sheng)，需(xu)要(yao)將門極驅動(dong)用的(de)(de)印(yin)刷基(ji)(ji)板固定。

二、igbt模塊怎么測量好壞

判斷(duan)IGBT模塊是否損壞，一般(ban)需要先對其(qi)進行檢(jian)測，igbt模塊的檢(jian)測一般(ban)分(fen)為兩(liang)部分(fen)：

1、判斷極性

首先將(jiang)萬(wan)用(yong)(yong)表撥在R×1KΩ擋，用(yong)(yong)萬(wan)用(yong)(yong)表測(ce)量(liang)時，若(ruo)某一(yi)極與其(qi)它兩極阻(zu)(zu)值(zhi)為(wei)(wei)無窮大，調(diao)(diao)換(huan)表筆(bi)(bi)后該極與其(qi)它兩極的(de)阻(zu)(zu)值(zhi)仍為(wei)(wei)無窮大，則判斷此極為(wei)(wei)柵極（G），其(qi)余兩極再用(yong)(yong)萬(wan)用(yong)(yong)表測(ce)量(liang)，若(ruo)測(ce)得阻(zu)(zu)值(zhi)為(wei)(wei)無窮大，調(diao)(diao)換(huan)表筆(bi)(bi)后測(ce)量(liang)阻(zu)(zu)值(zhi)較小。在測(ce)量(liang)阻(zu)(zu)值(zhi)較小的(de)一(yi)次中，則判斷紅(hong)表筆(bi)(bi)接的(de)為(wei)(wei)集電(dian)極（C）；黑表筆(bi)(bi)接地為(wei)(wei)發射極（E）。

2、判斷好壞

將萬(wan)(wan)用(yong)(yong)(yong)(yong)表(biao)撥在R×10KΩ擋，用(yong)(yong)(yong)(yong)黑表(biao)筆接IGBT的(de)(de)(de)集電(dian)(dian)極(ji)（C），紅表(biao)筆接IGBT 的(de)(de)(de)發(fa)射極(ji)（E），此(ci)時(shi)萬(wan)(wan)用(yong)(yong)(yong)(yong)表(biao)的(de)(de)(de)指(zhi)(zhi)針在零位。用(yong)(yong)(yong)(yong)手指(zhi)(zhi)同(tong)(tong)時(shi)觸(chu)(chu)(chu)及一(yi)下柵(zha)極(ji)（G）和(he)集電(dian)(dian)極(ji)（C），這時(shi)IGBT被觸(chu)(chu)(chu)發(fa)導通，萬(wan)(wan)用(yong)(yong)(yong)(yong)表(biao)的(de)(de)(de)指(zhi)(zhi)針擺向(xiang)(xiang)阻值(zhi)較(jiao)小(xiao)的(de)(de)(de)方向(xiang)(xiang)，并能站住指(zhi)(zhi)示在某(mou)一(yi)位置。然后再(zai)用(yong)(yong)(yong)(yong)手指(zhi)(zhi)同(tong)(tong)時(shi)觸(chu)(chu)(chu)及一(yi)下柵(zha)極(ji)（G）和(he)發(fa)射極(ji)（E），這時(shi)IGBT被阻斷，萬(wan)(wan)用(yong)(yong)(yong)(yong)表(biao)的(de)(de)(de)指(zhi)(zhi)針回零。此(ci)時(shi)即可判斷IGBT是好(hao)的(de)(de)(de)。

三、IGBT模塊檢測注意事項

任何指(zhi)針式萬(wan)用表(biao)皆可用于檢測IGBT。注(zhu)意判斷IGBT好(hao)壞(huai)時(shi)，一定要將萬(wan)用表(biao)撥在R×10KΩ擋，因R×1KΩ擋以下各檔萬(wan)用表(biao)內部電池(chi)電壓太低(di)，檢測好(hao)壞(huai)時(shi)不(bu)能(neng)使IGBT導通，而無法(fa)判斷IGBT的好(hao)壞(huai)。